Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...